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IMEC is the largest independent microelectronics R&D centre in Europe. Over 1500 employees work in collaboration with a large number of leading-edge companies and R&D organizations world-wide. IMEC performs scientific research that runs 3 to 10 years ahead of the industrial needs, with a view to practical applications. III-nitride materials, such as GaN, have become the most important semiconductors materials since silicon. Thanks to electrical breakdown field of more than 10 times larger than that of silicon, these materials may be used for devices operating in the high-power/high-frequency field. Important applications for GaN devices are foreseen in high frequency switching for AC/DC, DC/DC power converters, such as for power factor correctors, UPS, power supplies for domestic appliances or Hybrid Electrical Vehicle. To reach the market, however the cost of this new technology needs to be considerably reduced, for instance by growing the III-nitrides on widely available large-area Si substrates. In 2006, IMEC reached a significant breakthrough with the first worldwide demonstration of an AlGaN/GaN transistor epilayer grown on 150 mm Si substrates. Today, IMEC is extending this effort towards the development of high voltage switching devices and power converter circuits within a Si-compatible technology. To realize this initiative, IMEC is looking for a (m/f) Research Engineer on GaN Power Devices. Profile: Are you interested in this offer? Apply online at www.imec.be/jobs or send your application with curriculum vitae to IMEC, Ms Sofie Hermans, Kapeldreef 75, 3001 Leuven, Belgium. You can also check our other opportunities on www.imec.be/jobs
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